| PART |
Description |
Maker |
| 2SC4095 2SC4095-T1 2SC4095R 2SC4095R-T2 2SC4095R-T |
For amplify microwave and low noise.
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
|
NEC[NEC]
|
| 2SC5194 2SC5194-T1 2SC5194-T2 2SC5194F-T2 2SC5194N |
Discrete 离散
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70%
Voltage Detectors in 4-Bump (2 x 2) Chip-Scale Package
|
NEC[NEC]
NEC Corp.
|
| MRF586 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
ADPOW[Advanced Power Technology]
|
| MS1251 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Advanced Power Technology
|
| MRF5943C |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
ADPOW
Advanced Power Technology
|
| BFR90 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Microsemi Corporation
|
| BFR90 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Advanced Power Technology
|
| MRF914 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
New Jersey Semi-Conduct...
|
| MGFC1403 MGFC1403-A12 |
For Microwave Low Noise Amplifiers N-Channel Schottky Barrier Gate Type
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
FOR MICROWAVE LOW-NOISE AMPLIFIERS /N-CHANNEL SCHOTTKY BARRIER GATE TYPE
FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| 2N6255 MSC1306 |
From old datasheet system
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
MICROSEMI[Microsemi Corporation]
|
| 2N2857 MSC1066 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
From old datasheet system
|
Microsemi Corporation
|
